Sanan Optoelectronics detailed information

Sanan Optoelectronics Co., Ltd. is a "National High-tech Industrialization Demonstration Project" approved by the National Development and Reform Commission, a "Leading Semiconductor Lighting Engineering Enterprise" recognized by the Ministry of Science and Technology and the Ministry of Information Industry, and a "Leading Enterprise in Semiconductor Lighting Engineering" by the Ministry of Aerospace and Aeronautics. "Strategic Partner". Founded in November 2000, it is located in the beautiful Ludao Xiamen. It is currently the domestic full-color ultra-high brightness LED epitaxy and wafer industrial production base. Basic introduction Chinese name: Sanan Optoelectronics Foreign name: Sanan optoelectronics Pinyin: sān ān guāng diàn Region: Xiamen Company profile, listing information, corporate spirit, products, corporate culture, Sanan corporate culture, Sanan spirit, values, business philosophy, Service purpose, quality policy, company mission, company vision, corporate talent concept, recruitment slogan, training slogan, corporate honors, major events, leading technology, moved back to Xiamen, corporate profile Sanan Optoelectronics Co., Ltd. is responsible for the national "863" major projects , with a national-level postdoctoral research workstation and a national-level enterprise technology center. The company is located on the north side of Xiamen International Convention and Exhibition Center, covering an area of ??50,000 square meters. It is a modern garden-style factory. The company is mainly engaged in the research and development, production and sales of full-color ultra-high brightness LED epitaxial wafers, wafers, compound solar cells, PIN photodetector wafers, etc. The product performance indicators are at the internationally advanced level. The company's mission is to build a national high-tech enterprise with independent intellectual property rights, and its vision is to create a world-class enterprise. It has modern clean workshops ranging from Class 1,000 to Class 10,000, and more than a thousand (sets) of the most advanced LED epitaxial growth and wafer manufacturing equipment at home and abroad. When the third phase of Tianjin San'an expansion is completed, the total number of MOCVD units will reach more than 100. Its scale ranks first in China and among the top ten internationally. It has achieved an annual production capacity of 650,000 epitaxial wafers and 20 billion wafers. The company has a high-quality expert team composed of top talents in optoelectronic technology from the United States, Taiwan, Japan and China. The company has applied for and obtained more than 60 invention patents and proprietary technologies. The company operates in strict accordance with the international quality management system and international environmental management system standards for all employees, all aspects and the entire process. It passed the ISO9001:2000 quality system certification in 2003 and the ISO14001:2004 environmental management system certification in 2008. In 2009, the company passed the ISO/TS16949 automotive industry production parts and related service parts quality management system audit. Listing information Company name: Sanan Optoelectronics Co., Ltd. English name: Sanan Optoelectronics Co.,ltd Securities abbreviation: Sanan Optoelectronics Securities code: 600703 Legal representative: Lin Xiucheng Securities Regulatory Commission Industry classification: Electronic securities Category: Shanghai A-share listing date: 1996-05-28 Enterprise Spirit Sanan Optoelectronics adheres to the enterprise spirit of "integrity and unity, pioneering and innovative, overcoming difficulties, and bravely climbing to the top" and the business philosophy of "pragmatism, innovation, customer first, service first". As a national high-tech industrialization demonstration project and an enterprise postdoctoral research station approved by the Ministry of Personnel, Sanan Optoelectronics has the world's most advanced instruments and equipment and a high-standard production environment, and has gathered a group of first-class LED production technology experts at home and abroad. It has a high-quality R&D team composed of top talents in optoelectronic technology from the United States, Japan, Taiwan and China. Its R&D capabilities rank among the best in the country. So far, it has applied for and obtained 33 invention patents and proprietary technologies. Sanan Optoelectronics insists on surviving by quality, developing by innovation, and has the courage to explore and innovate continuously. The pace of product upgrading keeps pace with international trends, and a number of technologies with independent intellectual property rights fill domestic gaps. The company's products mainly include full-color ultra-high brightness LED epitaxial wafers, wafers, PIN photodetector wafers, compound solar cells, etc. All performance indicators rank first in China and at the international advanced level. After several years of continuous expansion and improvement, Sanan Optoelectronics has established a mature marketing system, with a capable and hard-working marketing team, a global marketing network, and products exported to many countries and regions, receiving unanimous praise from domestic and foreign customers. Sales performance increases at an average annual growth rate of 40%. Products The company is mainly engaged in the R&D, production and sales of full-color ultra-high brightness LED epitaxial wafers and wafers, compound solar cells, PIN photodetector wafers, etc.

The company has a high-quality expert team composed of top talents in optoelectronic technology from the United States, Taiwan, Japan and China. It has applied for and obtained 48 invention patents and proprietary technologies, and its product performance indicators are at the internationally advanced level. Ultra-high brightness LED is a new generation of energy-saving lighting products. It is energy-efficient, long-life, and environmentally friendly (high-efficiency and energy-saving: power consumption is 1/10 of incandescent lamps and 1/2 of fluorescent lamps; long life: 100,000 hours; green and environmentally friendly: no radiation, no harmful elements such as lead and mercury). The three major advantages are widely used in landscape lighting, backlights, car lights, traffic lights, advertising billboards, indoor and outdoor full-color displays and other fields. Semiconductor technology is giving birth to a new industrial revolution - a new light source revolution. The sign is that semiconductor lamps will gradually replace incandescent lamps and fluorescent lamps. According to statistical forecasts from domestic professional consulting organizations: my country's LED output value was 14 billion yuan in 2006. With the rapid development of the domestic LED industry, it is expected that the size of my country's LED application market will reach 54 billion yuan by 2008 and will exceed 100 billion yuan by 2010. . Corporate Culture Sanan Corporate Culture Sanan corporate culture is the culture formed during the long-term development of Sanan. It is the source of strength for corporate growth and the soil for corporate success. Only by integrating culture into the enterprise, shaping the corporate image, and promoting the entrepreneurial spirit can the enterprise have a brilliant future. Sanan spirit: Dare to be the first, work hard and contribute. Values ??People-oriented, scientific and technological innovation, pursuit of excellence, harmony, win-win business philosophy: I have what others have, I have excellence when others have, pursuit of excellence, and long-lasting service tenet: Integrity and efficiency, customers first, service first Quality policy: quality first, customers Satisfaction, high quality and stability, and continuous improvement. The company's mission is to make the earth more environmentally friendly and make human beings healthier. The company's vision leads the "core" trend and contributes to new energy. The enterprise's talent concept is to recruit talents in an eclectic way, develop talents comprehensively, gather internal forces to assist talents, and be people-oriented. Use talented people. Recruitment slogan Promote my development and help you grow! Training Slogan Your growth depends on your investment! Corporate Honors: In 2003, the company was listed as a leading enterprise in national semiconductor lighting engineering by the Ministry of Science and Technology; in 2003, it was confirmed as a "strategic partner" by the Ministry of Aerospace and Aeronautics; in 2004, the company's technology center was confirmed as a provincial enterprise technology center; in 2004, it was elected It is the president unit of Xiamen Optoelectronics Industry Association; in 2004, it was elected as the vice chairman unit of China Optoelectronic Devices Association; in 2004, it was elected as the executive director unit of the National Semiconductor Lighting Engineering R&D and Industry Alliance; in 2006, it was officially approved by the National Ministry of Personnel Established a postdoctoral scientific research workstation to carry out postdoctoral scientific research work; In 2007, it was recognized as a "National High-tech Industry Demonstration Project" unit by the National Development and Reform Commission; In 2008, it was elected as the president unit of the Fujian Optoelectronics Industry Association; In 2008, the company's technology center was recognized as a national Level Enterprise Technology Center; In 2009, the company was recognized as a Xiamen Intellectual Property Demonstration Unit; In 2009, the company was named a National Intelligence Introduction Demonstration Unit. Major Events In June 2011, the "China LED Industry Annual Selection (2010)" selection event was organized by China Electronics Newspaper, China Optical Association LED Device Branch, China Optical Association LED Display Application Branch, etc., covering all LED epitaxy, wafer , packaging devices, application engineering and other industrial fields. Sanan Optoelectronics won the "2010 Most Growth Enterprise Award in China's LED Industry" for its leading innovation level, strong technical strength, rapid development speed and good performance in 2010. In April 2011, the company's "Ultra-high-brightness LED chip for TFT-LCD backlight" project won the first prize of the 2010 Xiamen Science and Technology Progress Award. At the same time, the project's product "S-23ABMUP series LED chip for backlight" won the 2010 Xiamen Science and Technology Progress Award. First prize of the annual Xiamen Excellent New Product Award. In order to further accelerate the brand building of Sanan Optoelectronics and increase the company's influence, Sanan Optoelectronics participated in the Xiamen Municipal Government from October 19 to October 24 at the invitation of Xiamen Municipal ***, Xiamen Trade Development Bureau, and Xiamen Chamber of Commerce. The 7th China-ASEAN Expo. On September 27, 2010, the 2010 Sanan Optoelectronics new product promotion and press conference was successfully held at the Kempinski Hotel in Shenzhen. This promotion meeting received widespread attention within the industry, with more than 120 customer representatives attending. January 2010: Anhui Sanan Optoelectronics Co., Ltd. was established.

November 2009: The company's "RS-B1 ultra-high brightness power red light-emitting diode chip" passed the new product expert appraisal and was recognized as the first in China, and the main performance of the product has reached international standards. November 2009: Our company’s “Development and Industrialization of High-brightness Power White Light Diode Chips for Semiconductor Lighting” project won the second prize of Xiamen Science and Technology Award. November 13, 2009: Our company’s power red chip passed the new product identification. September 2009: Our company won the TS16949:2002 certification registration. August 2009: The "semiconductor lighting device research and development and industrialization" project undertaken by our company was included in the 2009 key support projects of the Information Industry Development Fund by the Ministry of Information Industry. March 2009: The 2006 National Development and Reform Commission Enterprise Technology Progress and Industrial Upgrading Special Project "Power Semiconductor Panchromatic Chip Industrialization" undertaken by our company passed the acceptance inspection. February 12, 2009: Our company's main product "S-RGB07 full-color ultra-high brightness LED chip" won the first prize of Fujian Province's Outstanding New Product. December 2008: Tianjin Sanan Optoelectronics Co., Ltd. was established. December 8, 2008: The "Industrialization of Ultra-High-Brightness LED Chips for TFT-LED Backlight" project undertaken by our company was included in the fourth batch of industrial technology research and development funds high-tech industry development project plan in 2008 by the National Development and Reform Commission. . November 2008: The project "R&D and Industrialization of Ultra-High-Brightness Semiconductor Red Light-Emitting Diode (LED) Chips for LCD Backlight Sources" undertaken by our company was included in the 2008 Key Support Projects of the Information Industry Development Fund by the Ministry of Information Industry. . October 2008: The company's technology center was awarded the title of "National Enterprise Technology Center". August 2008: Won the ISO14001:2004 environmental management system certification. July 2008: The company was successfully listed on the domestic A-share market. January 2008: Our company was awarded the honorary title of "Xiamen City's Top Ten Industrial Enterprises in 2007" by the Xiamen Municipal People's Government. November 2007: Our company's "S--RGB07 full-color ultra-high brightness (red, orange, yellow, blue, green) LED chip" product passed the new product and new technology expert appraisal organized by Xiamen Economic Development Bureau. The conclusion is that the "substrate transferred red power LED" product owned by our company is the first in China and fills the domestic gap. October 2007: Our company was awarded the title of "National High-tech Industrialization Demonstration Project" by the National Development and Reform Commission. March 2007: Japanese scholar Dr. Kazuhiro Okawa was hired as our company’s technical consultant. December 2006: The "100lm/W power white light LED manufacturing technology" project undertaken by the company was identified as a national high-tech research and development plan (863 project) project by the Ministry of Science and Technology. November 2006: The "Industrialization of Power Semiconductor Full-Color Chips" project undertaken by the company was included in the "National 2006 Special Project for Technological Progress and Industrial Upgrading of Information Industry Enterprises" by the National Development and Reform Commission. July 2006: The company's "power high-brightness LED chip and flip-chip technology" project passed expert appraisal, and the appraisal result was that the industrialization technical indicators have reached the domestic leading level. May 2006: The company was officially approved by the Ministry of Personnel to establish a postdoctoral research workstation to carry out postdoctoral research work. April 2006: The company's "Development and Industrialization of Gallium Nitride-based Light-Emitting Diode Epitaxial Wafers and Wafers" project passed expert appraisal. The appraisal results are: the scale of industrialization has reached the largest level in the country, the quality is stable and reliable, and the technical indicators have reached the leading level in the country. December 2005: The company's major project "Semiconductor Lighting Industrialization Technology Development" of the "Tenth Five-Year Plan" National Science and Technology Research Plan fully passed the expert acceptance organized by the National Ministry of Science and Technology. November 2005: The company's "GaN-based light-emitting diode epitaxial wafer and device preparation" project was recognized as a high-tech achievement transformation project in Xiamen. June 2005: The company's "Development and Industrialization of High-brightness Power White Light Diode Chips for Semiconductor Lighting" project was included in the 2005 National Torch Plan project by the Ministry of Science and Technology. March 2005: The company's "Semiconductor Lighting High-Brightness Power White Light Diode Chip Development and Industrialization" project was listed among the top ten key investment projects in Fujian Province in 2005. November 2004: The "Development and Industrialization of High-Brightness Power White Light Diode Chips for Semiconductor Lighting" project was included in the 2005 key support projects of the Information Industry Fund by the Ministry of Information Industry. September 2004: The company was honored as the vice chairman unit of China Optoelectronic Devices Association.

August 2004: The company's technology center was awarded the title of "Provincial Enterprise Technology Center" by the Fujian Provincial Economic and Trade Commission. August 2004: The multi-junction compound solar cell passed the testing and use of the Shanghai Space Power Research Institute of China Aviation Science and Technology Corporation, filling the domestic gap. February 2004: The company was recognized as a key high-tech enterprise in Xiamen. October 2003: The National Semiconductor Lighting Industry Alliance awarded the company the title of "Leading Enterprise in Semiconductor Lighting Engineering". October 2003: The company won the Silver Award for Invention at the 14th National Invention Exhibition for "A Method of Making N Electrodes of Gallium Nitride Light-Emitting Diode Wafers" and "A Light-Emitting Diode Epitaxial Structure" respectively. and Bronze Medal. September 2003: The company developed LED chips with independent intellectual property rights in my country, breaking the past history of relying entirely on imports of LED chips. September 2003: The company's technology center was awarded the title of "Municipal Enterprise Technology Center". April 2003: The "GaN-based light-emitting diode epitaxial wafer and device preparation" project undertaken by the company was included in the National Development and Reform Commission's 2003 special high-tech industrialization demonstration project for optoelectronics and new components. February 2003: Won the ISO9001:2000 quality management system certification. January 2003: The company passed the scientific and technological achievement appraisal of full-color ultra-high-brightness LED chips and became the first domestic manufacturer to realize full-color ultra-high-brightness light-emitting diode chips. September 2002: The company's first epitaxial wafer was successfully produced. December 2000: The company was recognized as a high-tech enterprise in Xiamen. Sanan Optoelectronics' 4 billion project investment and construction process On March 15, 2013, Sanan Optoelectronics issued an announcement and decided to terminate the company's plan to publicly issue additional A shares. The announcement stated that due to changes in the market environment and in light of the company's situation, after discussions between the company and the sponsor Ping An Securities, it was decided to terminate the company's plan for the public issuance of A shares and apply to the China Securities Regulatory Commission to withdraw the company's plan for the public issuance of A shares. application files. However, in the announcement, Sanan Optoelectronics did not mention the specific content of the additional issuance plan, nor did it mention the investment projects of the fundraising plan. Data shows that on May 6, 2011, Sanan Optoelectronics announced a plan to publicly issue no more than 210 million A shares. The total amount of funds raised will not exceed 8 billion yuan (including issuance fees), all of which will be used for Anhui Sanan Optoelectronics Co., Ltd. Wuhu Optoelectronics Industrialization (Phase II) project and Anhui Sanan Optoelectronics Co., Ltd.’s LED application product industrialization project, the total investment of the two projects is approximately 9.125 billion yuan. Among them, Wuhu Phase II is 5 billion yuan. Three months later, Sanan Optoelectronics issued another announcement stating that based on the review feedback from the securities regulatory authorities, the amount of the above-mentioned additional issuance was reduced to a total of no more than 6.3 billion yuan, and the funds to be invested in the second phase of Wuhu also shrank to 4 billion yuan. Despite this, , the additional issuance plan has yet to make substantial progress. The effect of expansion has yet to be tested by the market. Compared with two years ago, Sanan Optoelectronics' LED upstream industry has become increasingly oversupplied and profits have declined. Some people in the industry speculate that Sanan Optoelectronics may have taken this into consideration by voluntarily giving up on raising additional funds and slowing down the launch of new projects. However, Wang Qing denied the above speculation in the interview. He said that there is still a lot of room in the market. However, Wang Qing did not directly answer what impact the stranding of Wuhu Phase II will have on the company, saying that the company's performance will be reflected in the financial report. According to Sanan Optoelectronics' 2012 annual report, the company achieved revenue of 3.363 billion yuan in 2012, a year-on-year increase of 92.48%; net profit was 810 million yuan, a year-on-year decrease of 13.47%. In addition, the gross profit margin of its main business LED was 25.31%, a year-on-year decrease of 14.36%. According to its annual report, the MOCVD equipment purchased by Anhui Sanan Optoelectronics Co., Ltd. Wuhu Optoelectronics Industrialization (Phase I) Project (hereinafter referred to as Wuhu Phase I) has been put into production. Although it has achieved certain economic benefits, due to the fact that most of the equipment was It will take a while to gradually put into production and reach full production. When production capacity is fully released and economies of scale are fully exerted, the company's performance will be gradually reflected. In the first quarter of 2013, Sanan Optoelectronics’ net profit fell by 18.77% year-on-year. Zhao Fei said that Sanan Optoelectronics is quite powerful in the field of domestic LED epitaxial wafers, but with current overcapacity, blind expansion may have hidden risks. The aforementioned industry insiders said that the production capacity gradually released in Wuhu Phase I will further contribute to Sanan Optoelectronics' future performance. After tasting the sweetness, Sanan Optoelectronics' desire for Wuhu Phase II is also reasonable.

Leading Technology The company has a high-quality expert team composed of top talents in optoelectronic technology from the United States, Taiwan, Japan and China. The company has applied for and obtained 54 invention patents and proprietary technologies, is undertaking major national "863" projects, and has a national-level postdoctoral research station and a national-level enterprise technology center. 1. In January 2003, it passed the scientific and technological achievement appraisal of full-color ultra-high brightness LED chips. The appraisal conclusion is that: the project hardware level is first-class in the country, equivalent to the international contemporary level, and the project industrialization level is the highest level in the country and close to the international advanced level. The main technical indicators of the products are leading in the country, especially the successful development and industrialization of ultra-high brightness green LED epitaxial wafers, which fills the domestic gap. It is rated as the first domestic manufacturer to realize the industrialization of this project, and its product quality is stable and reliable; 2. In April 2003, the company's "GaN-based light-emitting diode epitaxial wafer and device preparation project" was included in the 2003 Special High-tech Industrialization Demonstration Project for Optoelectronics and New Components by the National Development and Reform Commission; 3. June 2003 The "High-brightness blue LED products and applications" project was included in the 2003 Electronic Information Industry Development Fund Project of the Ministry of Information Industry; 4. In March 2004, the "Power-type high-brightness light-emitting diodes and key technologies for packaging industrialization" project was included in the list. The "Semiconductor Lighting Industrialization Technology Development" project was included in the "Tenth Five-Year Plan" National Science and Technology Major Projects; 5. In November 2004, the "Semiconductor Lighting High-brightness Power White Light Diode Chip Development and Industrialization" project was approved by the National Information The Ministry of Industry was included in the key support projects of the Information Industry Fund in 2005; 6. In November 2006, the "Industrialization of Power Semiconductor Full-Color Chips" project undertaken by our company was included in the "National Information Industry Enterprise Technology Progress and Development Project in 2006" by the National Development and Reform Commission. "Industrial Upgrading Special Project"; 7. In December 2006, the "100lm/W power white light LED manufacturing technology" project undertaken by our company was determined by the Ministry of Science and Technology as a National High-tech Research and Development Plan (863 Project) subject; 8. In 2007, the "Industrialization of Ultra-High-Brightness LED Chips for TFT-LCD Backlight" project undertaken by the Technology Center was included in the National Development and Reform Commission's major industrial science and technology projects; 9. In 2008, "Ultra-high-brightness semiconductor red for LCD backlight sources" The "Light Emitting Diode (LED) Chip R&D and Industrialization" project was listed as a key bidding project in 2008 by the Ministry of Information Industry; 10. In 2008, it undertook and led the municipal major science and technology plan joint project "High Efficiency Semiconductor" organized by the Municipal Science and Technology Bureau "Industrialization of Key Lighting Technologies and Their Applications", achieving the highest domestic level of industrialized power white light luminous efficiency reaching 80lm/w. 11. In 2009, the "Semiconductor Lighting Device R&D and Industrialization" project was listed as a key bidding project in 2009 by the Ministry of Information Industry. After moving back Xiamen's 1 billion yuan cash subsidy + 3 billion yuan large order contract, in the face of such an attractive "gift package" thrown out by the Xiamen Municipal Government, Sanan Optoelectronics has planned to implement the optoelectronics industry in Wuhu. Chemical (Phase II) project was moved back to Xiamen, the company's base, and the total project investment was increased from 4.076 billion yuan to 10 billion yuan. On April 4, 2014, Sanan Optoelectronics' board of directors reviewed and approved the proposal to sign an "Investment Agreement" between the company and the Xiamen Torch Development Zone Management Committee, and decided to invest in the development and construction of LED epitaxy and wafer R&D and manufacturing industrialization projects in the development zone.